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Franz-Keldysh oscillations and Wannier-Stark localization in GaAs/AlAs superlattices

机译:Gaas / Alas Supertrices的Franz-Keldysh振荡和Wannier-Stark定位

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We have studied the electroabsorption properties of GaAs/AlAs superlattices with a 1 monolayer (ML) and 2 ML wide AlAs barriers. At large electric fields F parallel to the growth direction, Wannier-Stark localization of the carrier states is observed, even for the case of 1 ML AlAs barriers. In the low- field regime (up to 60 kV/cm), Franz-Keldysh oscillations are found. These oscillations are associated with the miniband dispersion of the superlattice. The oscillation period shows an F$+2/3$/ behavior, as theoretically expected. Numerical calculations on electroabsorption in strongly coupled superlattices are also presented.
机译:我们研究了GaAs / Alas超晶格的电吸收性能,用1单层(mL)和2毫升宽的铝屏障。在与生长方向平行的大电场F,观察到载体状态的Wannier-Stark定位,即使对于1ml Alas屏障的情况,也是如此。在低场制度(最多60 kV / cm)中,找到了Franz-Keldysh振荡。这些振荡与超晶格的MINIBAND分散相关联。振荡周期显示为理论上预期的F $ + 2/3 $ /行为。还介绍了强耦合超晶格中电吸收的数值计算。

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