Experimental investigation of auger recombination processes in strained-layer quantum well systems

摘要

To understand the feasibility of using strain to reduce the Auger recombination rate of 1.5 $mu@m laser, we have directly measured the carrier lifetime in strained-layer InGaAs/AlGaInAs quantum well systems, using time-resolved photoluminescence measurements. We find that the Auger recombination rate can be reduced by applying either biaxial compressive or tensile strain. A longer radiative carrier lifetime is observed for the tensile-strained materials. The effect of strain and quantum confinement on the carrier lifetime is discussed.