In situ characterization of remote plasma treated and passivated InP by integral photoluminescence

摘要

The authors report on a downstream PECVD (plasma-enhanced chemical vapor deposition) apparatus which allows low-temperature deposition of passivating and insulating films on III/V materials using silico organics as source compounds. In combination with an arrangement for the measurement of the integral photoluminescence signal, this apparatus allows process control and optimization in view of the electronic properties of the semiconductor surface. This technique allows deposition of silicon dioxide at a temperature below 150 degrees C. C(V) and I(V) measurements performed on SiO/sub 2//Si MIS capacitors showed the electronic characteristics of the oxide films to be satisfactory; C(V) curves of SiO/sub 2//InP capacitors revealed that the InP surface is not degraded by the deposition process.