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Efficient Use of Unused Spare Columns to Improve Memory Error Correcting Rate

机译:有效地使用未使用的备用列以提高内存纠错率

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In the deep sub-micron ICs, growing amounts of on-die memory and scaling effects make embedded memories increasingly vulnerable to reliability and yield problems. Spare columns are often included in memories to repair defective cells or bit lines during production test. In many cases, the repair process will not use all spare columns. Schemes have been proposed to exploit these unused spare columns to store additional check bits which can be used to reduce the miscorrection probability for triple errors in single error correction -- double error detection (SEC-DED). These additional check bits increase the dimensions of the parity check matrix (H-matrix) requiring extra area and delay overhead. A method is proposed in this paper to efficiently fill the extra rows of the H-matrix on the basis of similarity of logic between the other rows. Optimization of the whole H-matrix is accomplished through logic sharing within a feasible operating time resulting in the reduced area and delay overhead.
机译:在深次微米IC中,越来越多的盘模内存和缩放效果使嵌入式存储器越来越容易受到可靠性和产量问题。备用柱通常包括在制作测试期间修复缺陷的细胞或位线的记忆中。在许多情况下,修复过程不会使用所有备用列。已经提出了这些未使用的备用列来存储额外的校验位,该检查位可用于在单个误差校正中降低三误差的错误矫正概率 - 双重错误检测(秒)。这些附加检查位增加了需要额外区域和延迟开销的奇偶校验矩阵(H-MATRIX)的尺寸。在本文中提出了一种方法,以基于其他行之间的逻辑的相似性有效地填充H-Matrix的额外行。通过在可行的运行时间内通过逻辑共享完成整个H矩阵的优化,从而导致降低区域和延迟开销。

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