thodes based on In$-0.53$/Ga$-0.47$/As/InP heterostructures (HS-photocathodes) with Schottky barriers for a spectral range of 0.9 - 1.6 $mu@m were investigated. The maximum external quantum yield was 0.5% at $lambda $EQ 1.5 $mu@m and dark current was I$-ed$/ $EQ 3*10$+$MIN@8$/ A/cm$+2$/. It has been shown that in such photoemitters under reverse bias of about U $EQ 30 V, the electric field completely penetrates into the working layer of the photocathode. Since the dark current does not depend on the value of the reverse bias, HS-photocathodes may be used for time analyzing tubes to record picosecond pulses with milliwatt peak intensity. To increase the signal/noise ratio we suggest using InP/In$-0.53$/Ga$-0.47$/As superlattice (SL) for designing a SL-photocathode with internal amplification.
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机译：根据Zhottky屏障的频谱范围为0.9 - 1.6 $ MU @ M的梭芯，基于$-0.53 $ / GA $-00.47 $ / AS / INP异质结构（HS-光电阴极）。 $ Lambda $ eq 1.5 $ mu @ m和黑暗当前的最大外部量子产量为0.5％，是我$ $ / $ eq 3 * 10 $ + $ min @ 8 $ / a / cm $ + 2 $ /。已经表明，在大约U $ eq 30V的反向偏压下的这种光学器中，电场完全渗透到光电阴极的工作层中。由于暗电流不依赖于反向偏置的值，因此HS-光电阴极可用于时间分析管以用毫瓦峰强度记录皮秒脉冲。增加我们建议使用INP /以$-$-$-$-ga $-0.47 $ / /作为超晶图（SL）的信号/噪声比，用于设计具有内部放大的SL-光电阴极。
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