首页> 外国专利> SEMICONDUCTOR PHOTOCATHODE AND METHOD FOR MANUFACTURING THE SAME, ELECTRONIC TUBE, AND IMAGE INTENSIFIER TUBE

SEMICONDUCTOR PHOTOCATHODE AND METHOD FOR MANUFACTURING THE SAME, ELECTRONIC TUBE, AND IMAGE INTENSIFIER TUBE

机译:半导体光电阴极及其制造方法,电子管和图像增强管

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor photocathode capable of improving quantum efficiency as compared with the conventional GaN photocathode, and a method for manufacturing the semiconductor photocathode.;SOLUTION: When XMIN(M) represents a minimum value for a composition ratio X in an intermediate region 1M, and XMIN(2) represents a minimum value for a composition ratio X in a second region 12, in a first region 11, 0≤g(x)≤XMIN(M) is satisfied, in the intermediate region 1M, g(x) is a monotone decreasing function and g(x)≤XMIN(2) is satisfied, in the second region 12, g(x) is a monotone decreasing function or a constant value, in a case where g(x) in the second region 12 is a monotone decreasing function, a thickness D1 of the first region 11 is 18 (nm) or more, and in a case where g(x) in the second region 12 is a constant value, the thickness D1 of the first region 11 is 31 (nm) or more.;COPYRIGHT: (C)2014,JPO&INPIT
机译:解决的问题:提供一种与传统的GaN光电阴极相比能够提高量子效率的半导体光电阴极及其制造方法。解决方案:当X MIN(M)代表中间区域1M中的组成比X的最小值,X MIN(2)表示第二区域12中的在第一区域11中的组成比X的最小值,0≤g满足(x)≤X MIN(M),在中间区域1M中,g(x)是单调递减函数,而g(x)≤X MIN(2),在第二区域12中,g(x)是单调递减函数或恒定值,在第二区域12中的g(x)是单调递减函数的情况下,第一区域的厚度D1区域11为18(nm)或更大,并且在第二区域12中的g(x)为恒定值的情况下,第一区域11的厚度D1为31(nm)或更大。 )2014,JPO&INPIT

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号