An electron rocking curve determination of the Al(001)/GaAs(001) interface atomic structure

摘要

A recent generalised Bloch wave treatment for propagating a fast electron wavefunction through an arbitrary number of coherent epitaxial layers is used to describe propagation through a bicrystal. This model is used to interpret electron diffraction data from an Al(001)/GaAs(001) bicrystal to determine the rigid shift AR across the interface. Measurements of 220 systematic row rocking curves from regions between misfit dislocations enable the rigid shift to be determined from two possible configurations. Results are consistent with △R=1/4< 100 >_(GaAs), in agreement with previous observations.