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Adaptive control of photolithography

机译:光刻的自适应控制

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摘要

Adaptive control techniques, with their capability for providing satisfactory control even when the process changes with time, are promising candidates for dealing with common problems encountered in photolithography processing such as batch-to-batch variations in resist properties, inconsistencies in resist curing, etc. In this paper an adaptive control strategy for the photolithography process is proposed and evaluated. The design utilizes a reduced-order lithography model, an on-line parameter estimator, and a nonlinear model-inversion controller (NMIC). The width of the printed resist lines - a crucial output of photolithography - is controlled by automatically adjusting the exposure energy. In the calculation of the appropriate exposure adjustment, the controller uses both measured critical dimensions as well as estimated values produced by the process model. The control system is capable of tracking changes in the photolithography process by automatic updating of key model parameters as the process evolves in time. Simulation studies of the closed-loop adaptive control strategy using the PROLITH simulation package to represent the lithography process demonstrate the feasibility of this approach.
机译:自适应控制技术,其能够提供令人满意的控制,即使流程随时间的变化也是有希望的候选者,用于处理光刻处理中遇到的常见问题,例如抗蚀剂特性的批量批量变化,抗蚀剂固化的不一致。本文提出并评估了光刻工艺的自适应控制策略。该设计利用依次阶光刻模型,在线参数估计器和非线性模型反转控制器(NMIC)。通过自动调节曝光能量来控制印刷抗蚀剂线的宽度 - 光刻的关键输出。在计算适当的曝光调整时,控制器使用测量的临界尺寸以及由过程模型产生的估计值。控制系统能够通过自动更新关键模型参数来跟踪光刻过程的变化,因为该过程及时演变。使用Poldith仿真包来表示光刻过程的闭环自适应控制策略的仿真研究证明了这种方法的可行性。

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