A Low Power, Good Gain Flatness SiGe Low Noise Amplifier for 3.1-10.6GHz Ultra Wide Band Radio

摘要

This paper presents a full band (3.1GHz to 10.6GHz) current-reused low noise amplifier (LNA) for ultra wide band (UWB) system based on the TSMC 0.35μm bipolar silicon-germanium (SiGe) processes. The implemented LNA achieves the gain of 14.3 dB, the noise figure (NF) minimum of 2.5 dB and good input and output matching from 3.1GHz to 10.6GHz. The power consumption is only 5.4 mW under a 1.5 supply voltage. By adding a feedback resister in the second stage of the adopted current-reused topology, the gain flatness is less than 0.5dB in every band group. The circuit occupies an area of 1.33 mm{sup}2.