p-MOSFET gate current and device degradation

机译：P-MOSFET栅极电流和设备劣化

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Hot-carrier-limited device lifetime of surface-channel p-MOSFETs is found to correlate well with gate current over a wide range of bias. The same result is not observed for buried-channel p-MOSFETs. A gate current model for surface-channel p-MOSFETs is presented. Using this gate current model, reasonable estimates of AC stress lifetime can be made based on DC stress data.

机译：发现表面通道P-MOSFET的热载波限制装置寿命与栅极电流相比，在各种偏置方面具有良好的栅极电流。掩埋通道P-MOSFET不观察到相同的结果。提出了一种用于表面通道P-MOSFET的栅极电流模型。使用该栅极电流模型，可以基于DC应力数据进行交流应力寿命的合理估计。

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《Annual International Reliability Physics Symposium》|1989年||共5页
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Ong T.-C.; Seki K.; Institute of Electric and Electronic Engineer;
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中图分类自动化技术、计算机技术;
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p-MOSFET gate current and device degradation

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