Basic Study on SAW Device with Semiconductor Layer as IDTs and Control Means for Variable Operation

摘要

This paper studies monolithic realization of SAW and layer wave devices using semiconductor layer in GaN/Al{sub}2O{sub}3. We try to fabricate transducer and control means with N{sup}+ layer and AlGaN/GaN hetero-structures. Experimental studies clarified that N{sup}+ layer is effectively used as IDTs and the hetero structure is useful for realizing field effect variable SAW devices monolithically.