A 35 GHz monolithic MESFET LNA

摘要

The design and fabrication of a state-of-the-art 35-GHz monolithic low-noise amplifier (LNA) is briefly described. The amplifier, with 6.5-dB gain, 4-dB noise figure, and 10-dBm power output at 1-dB gain compression, is based on a 0.25- mu m*200- mu m molecular-beam epitaxy (MBE)-grown MESFET. Device, circuit design, fabrication details, and test results are presented.