Method and apparatus for a monolithic integrated mesfet and p-i-n optical receiver

摘要

Disclosed is a semiconductor structure and manufacturing process for making an integrated FET and photodetector optical receiver on a semiconductor substrate. A FET is formed by forming at least one p channel in a p-well of the substrate and forming at least one n channel in the p-well of the substrate. A p-i-n photodetector is formed in the substrate by forming at least one p channel in an absorption region of the substrate when forming the at least one p channel in the p well of the FET and forming at least one n channel in the absorption region of the substrate when forming the at least one n channel in the p-well of the FET.