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Mid-Infrared Electro-Optical Modulation Using Monolithically Integrated Titanium Dioxide on Lithium Niobate Optical Waveguides

机译:在铌酸锂光波导上使用单片集成二氧化钛的中红外电光调制

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摘要

Tunable photonic circuits were demonstrated in the mid-Infrared (mid-IR) regime using integrated TiO2-on-LiNbO3 (ToL) waveguides. The upper waveguide ridge was made by a sputtered TiO2 thin film with broad transparency at λ = 0.4–8 µm and an optimized refractive index >n = 2.39. The waveguide substrate is a z-cut single crystalline LiNbO3 (LN) wafer that has strong Pockels effect, thus enabling the tunability of the device through electro-optical (E-O) modulation. A sharp waveguide mode was obtained at λ = 2.5 µm without scattering or mode distortion found. The measured E-O coefficient >γ>eff was 5.9 pm/V approaching >γ>31 of 8.6 pm/V of LN. The ToL waveguide showed a hybrid mode profile where its optical field can be modified by adjusting the TiO2 ridge height. Our monolithically integrated ToL modulator is an efficient and small footprint optical switch critical for the development of reconfigurable photonic chips.
机译:使用集成的TiO2-LiNbO3(ToL)波导在中红外(mid-IR)模式下演示了可调谐光子电路。上波导脊由溅射的TiO2薄膜制成,该薄膜具有λ= 0.4–8 µm的宽透明性和最佳折射率> n = 2.39。波导衬底是具有强Pockels效应的z切割单晶LiNbO3(LN)晶片,因此可以通过电光(E-O)调制实现设备的可调性。在λ= 2.5μm处获得了清晰的波导模,而没有发现散射或模畸变。测得的E-O系数>γ > eff 为5.9 pm / V,接近LN 8.6 pm / V的>γ > 31 。 ToL波导显示出一种混合模式轮廓,其中可以通过调节TiO2脊的高度来修改其光场。我们的单片集成ToL调制器是一种高效且占位面积小的光开关,对于开发可重构光子芯片至关重要。

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