A35 GHz monolithic MESFET LNA

摘要

The design and fabrication of a state-of-the-art 35-GHz monolithic amplifier is briefly described. The amplifier with 6.5-dB gain, 4-dB noise figure, and 10-dBm power output at 1-dB gain compression is based on a 0.25*200- mu m molecular-beam-epitaxy (MBE)-grown MESFET. Device, circuit design, fabrication details, and test results are presented.