Monolithic Ka-band VCOs

摘要

Two distinct monolithic GaAs voltage-controlled oscillators (VCOs) are reported: a Gunn diode-based circuit and a FET-based circuit. The Gunn VCO design incorporates 14 Gunn diodes, a varactor diode, power combiner, matching network and bias on a single integrated chip. The Gunn oscillator has delivered 125 mW at 32 GHz and 70 mW at 40 GHz with up to 500 MHz of electrical tuning bandwidth. The FET circuit uses a 0.25- mu m*200- mu m GaAs MESFET; it has produced up to 20-mW output power at 35 GHz and over 300 MHz of voltage tuning bandwidth.