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A Ka-band high power monolithic HEMT VCO using a sub-resonator circuit with phase control architecture

机译:使用具有相位控制架构的子谐振器电路的Ka波段高功率单片HEMT VCO

摘要

This paper reports on a high output performance of a Ka-band monolithic HEMT Voltage Controlled Oscillator(VCO). This VCO has a sub-resonator in order to avoid reduction in Q-factor of a resonator. Circuit elements of the sub-resonator are optimized to achieve a wide tuning range as well as high output power and low phase noise performances. In addition, an AlGaAs/InGaAs double-hetero struc­ture High Electron Mobility Transistor(HEMT) is employed in the VCO to obtain a high output per­formance. A high output power of 19.4 dBm has been achieved at an oscillation frequency of 36.2 GHz. This performance has been achieved without any buffer amplifiers. A tuning range of more than 2.5 GHz is also obtained with a stable high output power. To our knowledge, this represents the high­est output power of monolithic VCO without any buffer amplifiers.
机译:本文报道了Ka波段单片HEMT压控振荡器(VCO)的高输出性能。该VCO具有子谐振器以避免谐振器的Q因数减小。优化了子谐振器的电路元件,以实现宽调谐范围以及高输出功率和低相位噪声性能。另外,在VCO中采用AlGaAs / InGaAs双杂化结构高电子迁移率晶体管(HEMT),以获得高输出性能。在36.2 GHz的振荡频率下已实现19.4 dBm的高输出功率。在没有任何缓冲放大器的情况下已经实现了这一性能。稳定的高输出功率也可获得超过2.5 GHz的调谐范围。据我们所知,这代表了没有任何缓冲放大器的单片VCO的最高输出功率。

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