This work benchmarks the first demonstration of a monolithic HEMT LNA design which incorporates active regulated self-bias. The HEMT LNA bias current can be maintained to within /spl plusmn/3% variation over a process threshold variation (Vgs) of /spl plusmn/0.5 Volt. The bias circuitry regulates the bias current to within 1.5% over a 100/spl deg/C temperature range. The amplifier has a nominal gain of 10 dB and a noise figure of 2.5 dB over a 1-10 GHz bandwidth. Across several wafers with a threshold voltage spread of 0.5 Volts, the active bias-regulated LNA maintains repeatable gain and noise figure which varies by less than 1 dB and 0.75 dB respectively. This monolithic regulated self-biased LNA demonstration sheds new light on the producibility and reliability of HEMT MMICs and their applications.
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