Monolithic 9 to 70 GHz distributed amplifier

摘要

Multioctave monolithic GaAs pseudomorphic high-electron-mobility transistor (HEMT) amplifiers have been developed to operate from 9 to 70 GHz. These amplifiers make use of state-of-the-art HEMT devices of less than 0.2 mu m. Typical performance for a distributed amplifier using a 75- mu m device is 4 dB of gain with 0.5-dB peak-to-peak ripple and a maximum noise figure of 7 dB across the 9 to 70-GHz band. Monolithic distributed amplifier design with capacitive gate coupling is described.