Monolithic Ku-band GaAs 1-watt constant phase variable power amplifier

摘要

Three stages of dual-gate FETs (DGFETs) are used to achieve greater than 1-W output power with more than 14 dB associated gain under compressed RF drive while providing more than 30 dB of gain control. Minimal phase variation over the gain control range was also demonstrated. The first, second, and third stages have 800, 3200, and 6400- mu m gate peripheries, respectively. The compressed gain of this amplifier is 14 dB with 1 W output power over the 13.5- to 15.5-GHz band. The input return loss is typically 15 dB across the band.