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Integrated amplifier/antenna elements for gallium arsenide monolithic phased arrays.

机译:用于砷化镓单相相控阵的集成放大器/天线元件。

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摘要

Future communications and radar systems operating at frequencies above 20 GHz are expected to make use of monolithic phased arrays based on GaAs Monolithic Microwave Integrated Circuit (MMIC) technology. This thesis investigates the integration of amplifiers and antennas on GaAs to form active amplifier/antenna elements suitable for use in such arrays.;The evolution of phased arrays is first considered, and it is seen that recent technological progress has led to the possibility of realizing phased arrays in monolithic form not only with microwave circuit techniques, but also with the use of emerging digital and optical technologies. Then, an overview of active antenna realizations is given, in which various transmitting, receiving and transmitting/receiving configurations are assessed in terms of the applicability to monolithic phased arrays. It is found that the desired active antenna element consists of an amplifier/antenna.;After studying the characteristics of resonant type antenna structures, the most efficient radiating element on GaAs MMIC substrates is determined to be the slot radiator. As a result, an analytical tool is developed to obtain the slot input impedance in terms of its geometry for subsequent integration with active devices. The analysis is based on an integral equation formulation for a magnetically coated dipole, this being the complementary/dual structure of the slot on a dielectric substrate, and a moment method solution is employed to obtain the input impedance numerically. Results of the computations compare favourably with experimental data. In addition, newly developed on-wafer techniques are described for the measurement of integrated-circuit slot antenna parameters such as input impedance and radiation patterns.;To demonstrate the feasibility of MMIC phased array realization, an optimum monolithic array configuration is proposed and the form of the constituent active amplifier/antenna elements is defined. The amplifier/antenna is a new MMIC structure, consisting of a P-HEMT device connected without matching circuitry to a slot radiator on the opposite side of the substrate by means of metallized via holes. A method is presented for the analysis of the amplifier/antenna using the slot input impedance calculation previously developed, and a commercial microwave circuit CAD package to represent the device and antenna feed characteristics.;The practical MMIC implementation of a novel transmitting amplifier/antenna is then described along with the results of its performance. At the 30 GHz design frequency, a gain of 7.4 dB is obtained from the amplifier portion of the active antenna, while the radiation pattern exhibits a symmetrical, single lobe characteristic, is predicted. This is the first demonstration of an MMIC which incorporates a P-HEMT and a slot radiator, and the first time via holes have been used to connect between circuit components on both sides of the wafer. It is concluded that the principle of the amplifier/antenna, as well as its analysis method, are validated. A more exhaustive study of slot antenna input impedances is recommended as future work to allow the realization of increasingly compact, enhanced performance transmit- and receive-mode amplifier/antennas.
机译:预计未来工作在20 GHz以上的频率的通信和雷达系统将使用基于GaAs单片微波集成电路(MMIC)技术的单相相控阵。本文研究了在GaAs上集成放大器和天线以形成适用于此类阵列的有源放大器/天线元件。;首先考虑了相控阵的发展,并且可以发现,最近的技术进步已导致实现这一可能性。单相形式的相控阵列不仅具有微波电路技术,而且还具有新兴的数字和光学技术的应用。然后,给出了有源天线实现的概述,其中根据对单相相控阵的适用性评估了各种发射,接收和发射/接收配置。发现所需的有源天线元件由放大器/天线组成。通过研究谐振型天线结构的特性,确定GaAs MMIC基板上最有效的辐射元件是缝隙辐射器。结果,开发了一种分析工具来获得插槽输入阻抗的几何形状,以便随后与有源器件集成。该分析基于磁涂层偶极子的积分方程公式,这是电介质基板上缝隙的互补/对偶结构,并且采用矩量法求解以数字方式获得输入阻抗。计算结果与实验数据相比具有优势。此外,还介绍了新开发的晶片上技术,用于测量集成电路缝隙天线参数(例如输入阻抗和辐射方向图)。为了证明实现MMIC相控阵的可行性,提出了一种最佳的单片阵列配置,其形式如下:定义了有源放大器/天线元件的组成。放大器/天线是一种新型的MMIC结构,包括一个P-HEMT器件,该器件通过金属化通孔在没有匹配电路的情况下连接到基板另一侧的缝隙辐射器。提出了一种使用先前开发的缝隙输入阻抗计算来分析放大器/天线的方法,并采用了商用微波电路CAD软件包来表示设备和天线的馈电特性。然后描述其性能结果。在30 GHz设计频率下,可从有源天线的放大器部分获得7.4 dB的增益,而辐射方向图则显示出对称的单波瓣特性。这是结合了P-HEMT和缝隙辐射器的MMIC的首次演示,并且首次使用通孔在晶片两侧的电路组件之间进行连接。结论是放大器/天线的原理及其分析方法得到了验证。建议对缝隙天线输入阻抗进行更详尽的研究,作为将来的工作,以实现日益紧凑,性能增强的发射和接收模式放大器/天线。

著录项

  • 作者

    Roy, Langis J. P.;

  • 作者单位

    Carleton University (Canada).;

  • 授予单位 Carleton University (Canada).;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 1993
  • 页码 153 p.
  • 总页数 153
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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