首页> 外文会议>Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual >A monolithic gallium arsenide interval timer IC with integrated PLL clock synthesis having five hundred picosecond single shot resolution
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A monolithic gallium arsenide interval timer IC with integrated PLL clock synthesis having five hundred picosecond single shot resolution

机译:具有集成的PLL时钟合成的单片砷化镓间隔计时器IC,单次分辨率为500皮秒

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A gallium arsenide (GaAs) integrated circuit for measuring single shot time intervals with 500 picosecond resolution has been designed, fabricated and tested. The circuit contains a 12 bit counter that can be extended externally and control circuitry for the detection of multiple intervals. Options such as number of intervals, minimum interval time, and timing resolution are user programmable. The circuit employs a self contained 2.0 GHz phase locked loop (PLL) clock synthesizer with less than 5 picoseconds rms jitter, and a lock time of 2.5 microseconds. The circuit is packaged in a 14 mm/sup 2/, 52 pin thermally enhanced plastic package and operates from a single +5 Volt supply. The nominal power dissipation is 2.8 Watts. The circuit is fabricated in a 0.6 micron gate length, enhancement/depletion GaAs MESFET process utilizing 4 layers of gold interconnect metalization. Inductors, capacitors and thin film resistors can be fabricated in this process, enabling integrated analog circuitry. The die size is 3.28 mm by 3.15 mm. The circuit has applications in collision avoidance sensors, laser surveying, police radar, and test.
机译:已经设计,制造和测试了用于测量单次发射时间间隔且具有500皮秒分辨率的砷化镓(GaAs)集成电路。该电路包含一个可在外部扩展的12位计数器,以及用于检测多个间隔的控制电路。间隔数,最小间隔时间和定时分辨率等选项是用户可编程的。该电路采用了自包含的2.0 GHz锁相环(PLL)时钟合成器,其均方根抖动小于5皮秒,锁定时间为2.5微秒。该电路采用14 mm / sup 2 /,52引脚耐热增强塑料封装,并采用+5 V单电源供电。标称功耗为2.8瓦。该电路采用0.6微米栅极长度,增强/耗尽型GaAs MESFET工艺制造,该工艺利用4层金互连金属化层。可以在此过程中制造电感器,电容器和薄膜电阻器,从而实现集成模拟电路。模具尺寸为3.28毫米乘3.15毫米。该电路可用于防撞传感器,激光测量,警用雷达和测试。

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