Improvement of dielectric strength of TiSix-polycide-gate system by using rapidly nitrided oxides

摘要

Silicide gates are expected for application to high-speed VLSI's. TiSix/thin poly-Si structures were chosen for this study to realize low-resistive gates. For the purpose, the poly-Si sublayer should be as thin as possible. For 0.5??m CMOS technology, gate oxides are required to be as thin as 10 nm.