Hot-carrier effects under pulsed stress in CMOS devices

摘要

Hot-carrier induced MOSFET degradation is a serious problem in high density CMOS VLSIs. Recent major concern has been concentrated on device degradation under pulsed stress, because this corresponds to actual circuit operations. Although much work has been done on the hot-carrier problem, the degradation mechanism is not clear. One effective approach to investigating this mechanism is the pulsed stress experiment.