OPTICAL ABSORPTION STUDIES OF (Ga_(0.1)In_(0.9))_2Se_3 THIN FILM

摘要

Thermal evaporation technique was used to deposit (Ga_(0.1)In_(0.9))_2Se_3 thin films. The optical transmission spectra of (Ga_(0.1)In_(0.9))_2Se_3 thin film were studied in the temperature range 77-300 K. Temperature behaviour of the Urbach absorption edge as well as the temperature dependencies of the energy pseudogap and Urbach energy were investigated. The influence of different types of disordering on the optical properties of (Ga_(0.1)In_(0.9))_2Se_3 thin film was discussed. Optical parameters of (Ga_(0.1)In_(0.9))_2Se_3 thin film and single crystalwere compared.