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Volumetrically Scanning the Structure of Stray-fields Above Grain-Oriented Electrical-Steel Using a Variably Angled TMR Sensor

机译:使用可变成角度的TMR传感器在体内扫描晶粒导向型电钢上方的杂散场的结构

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a new versatile scanning hardware based on a Micromagnetics STJ-020 MgO-based tunnelling magneto-resistance (TMR) sensor has been developed to volumetrically scan the thin boundary layer above a given sample. An (x,y) planar scan of the surface of a 7.5 mm × 7.5 mm sample of grain-oriented (3% Si) electrical steel is presented. Stray fields normal to the surface between -116 and 272 A/m are measured. At 10 μm/pixel domain and micro-domain structures are seen. At 5 μm/pixel the micro-domain structures resolve into clear Lancet domains. The domain images presented have greater qualitative similarity with Kerr effect observations than with Bitter technique results. An (x,z) vertical scan along a 2.35 mm transect reveals the perpendicular extent of the stray fields, with the normal components shown to emanate from the domain bodies and extend approximately 40 - 100 μm from the sample surface. With the aim of investigating how the stray fields close back onto the surface, the (x,z) transect is repeated with the sensor at 5, 10, 15 and 20 degrees from the vertical. For the first time, the stray fields from surface domains viewed by other techniques in only a planar (x,y) projection have been studied in the (x,z) plane perpendicular to the surface.
机译:已经开发了一种基于MicroMagnetics STJ-020 MgO的隧穿磁阻(TMR)传感器的新的通用扫描硬件,以体积扫描给定样品上方的薄边界层。提出了7.5mm×7.5mm样品的谷物取向(3%Si)电钢样品的表面的(x,y)平面扫描。测量常规到-116和272A / m之间的横向区域。在10μm/像素结构域和微结构域结构。在5μm/像素处,微结构域结构分解成透明柳叶型结构域。呈现的域图像与kerr效果观察具有更大的定性相似性,而不是苦取技术结果。沿2.35mm的横扫垂直扫描垂直扫描揭示了杂散场的垂直范围,并且正常组分显示出从畴内散发出来并从样品表面延伸约40-100μm。目的是研究如何靠近表面的杂散场,从垂直于垂直于5,10,15和20度重复(x,z)横断。首次,已经在垂直于表面的(x,z)平面中仅研究了由其他技术观看的表面域的杂散场。

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