Anatomy of Large Perpendicular Magnetic Anisotropy Energy in Co/Ni (111) multilayer

摘要

In the past few decades, spin-transfer torque, spin-orbit torque, and voltage control magnetic random access memory have become prominent options for non-volatile memory and computing due to their low write energy, fast write speed, and practically unlimited endurance. In the three kinds of phenomena mentioned above, the magnetic property such as magnetic anisotropy plays an important role in realizing magnetization switching. In particular, high perpendicular magnetic anisotropy for thermal stability at advance technology node and high voltage controlled magnetic anisotropy (VCMA) coefficient for low write energy are needed.