Investigation the solid phase crystallization kinetics at the high-temperature region by annealing amorphous silicon using micro-thermal-plasma jet

摘要

Solid phase crystallization (SPC) kinetics of silicon has been researched since the 70th of last century [1-2]. However, they mainly focused on low temperature region. In our knowledge, SPC mechanism at high temperature regime is still matter of research. In this study, we give a method to estimate the nucleation temperature and characteristic crystallization time as function of temperature when annealing amorphous silicon (a-Si) films by micro-thermal-plasma-jet (µ-TPJ) at high temperature.