Fabrication of Vertical Aligned Germanium Nanowires by Nanoimprint Lithography International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials

摘要

Ge has a lower carrier effective mass (electrons and holes), thus higher charge carrier mobility than Si. Its excellent electronic transport properties make it a prime candidate material for fabricating next-generation Si-compatible electronic and optoelectronic devices. Vertical Ge nanowire arrays are of particular interest due to their large surface to volume ratio and high integration that has been proposed to be an ideal material for a high-speed vertical gate-all-around field-effect transistor (FET). On the other hand, nanoimprint lithography (NIL) and Bosch process have been widely used to achieve Si nanowire array with small diameter and high aspect ratio. However, there are few reports on the top-down fabrication of Ge nanowire array.This study’s aim is to develop a method to fabricate uniform Ge nanowire arrays with a smooth surface by nanoimprint lithography and Bosch process.