Process Repeatability in Volume Manufacturing of Nanostructures Utilizing Nanoimprint Lithography

摘要

Nanoimprint Lithography (NIL) has demonstrated its value in manufacturing nanostructures with extremely tight tolerances for the optics industry. Doing NIL process on single samples in the lab has been displayed for a long time in industry and academia. Scaling up from one good sample to full wafer and wafer to wafer uniformity for many wafers in a row, has some obstacles to overcome. In this paper, we discuss the process repeatability of manufacturing nanostructures starting from basic line/space through various other periodic and meta structures. Demonstrating the manufacturing capability using NIL for pattering also includes the other related process steps such as thin films and etching. We discuss key metrology, process control characterization, and process stability which include thin film RI uniformity, master to print replication uniformity, and post etch structural critical dimensions uniformity (CDU). Our NIL process has achieved 1.0nm σ on line widths at 45nm. This precision of replication includes all variation introduced from multiple stamps, wafer to wafer prints, and multiple sites within the wafer. This level of process control at the masking layer needs to be maintained for the finished structure.