Carrier and refractive index dynamics in core-shell nanolasers grown on silicon during spontaneous and stimulated emission

摘要

In this work, we experimentally study the carrier and refractive index dynamics of InGaAs nanopillar grown on a Si oninsulator (SOI) substrate. The recombination process of the InGaAs NP is characterized with different optical techniques.Temperature dependent photoluminescence (PL) at 0.5mW excitation power is carried out to determine the influence oftemperature on carrier dynamics. The radiative recombination lifetime has been studied at 7K from time-resolvedphotoluminescence (TRPL) experiments at a certain excitation power. The optimal combination of pitch (separationbetween NPs) and diameter in the growth process of this nanostructure has also been measured. These results willcontribute to further optimization of the InGaAs nanolaser for integration of Ⅲ-Ⅴ optoelectronics on SOI substrates.