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Magnetoresistive Properties of Thin-film Systems Based on Permalloy and Silver

机译:基于Permololoy和银的薄膜系统磁阻性能

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Measurements of phase state, crystal structure, and magnetoresistive properties were carried out on as-deposited and annealed up to 500 and 700 K thin-film systems based on ferromagnetic alloy Ni80 Fe20 and noble metal Ag. The concentration of Ag atoms was chosen of 60 at.%. The thickness of the samples ranged from 20 to 100 nm. Microscopy shows that the phase state of the thin-film systems stayed unchanged before and after annealing up to 700 K. It was found that the as-deposited samples exhibit a negative magnetoresistance regardless of their thickness. The annealing up to 700 K leads to a decrease in the value of magnetoresistance and appearing of the anisotropic magnetoresistive effect.
机译:基于铁磁性合金Ni的沉积和退火,对相位状态,晶体结构和磁阻性能进行测量,并导致高达500和700k薄膜系统进行 80 Fe20和贵金属AG。 Ag原子的浓度选择为60.%。样品的厚度范围为20至100nm。显微镜表明,薄膜系统的相位状态在退火之前和之后保持不变,最高可达700 k。发现沉积的样品无论其厚度如何表现出负磁阻性。最高可达700 k的退火导致磁阻值的减少和出现各向异性磁阻作用。

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