Positron Annihilation in ZnO based varistor doped with Semiconductor Additives

摘要

Coincidence Doppler broadening spectra measurements on ZnO-based varistor doped with semiconductor additives have been investigated, and the proposed samples exhibit different characteristics. The peak of the ratio curve of pure zinc is the highest, the Positron Lifetime in sample a03 doped with ZT is the longest. The maximum probability of the positron-3d electron occurs in sample doped with semi-ZnO (sintered at 1300°C for 2h with conventional ceramic processing method). The electrical characteristics of the samples and the behavior of positrons in ZnO-based varistor have been discussed.