Aluminium Induced Vapor Phase Stain Etch Method for Generating Porous Silicon Structure

摘要

This work ensemble the structural features of Porous Silicon (PS) layers which are being fabricated employing modified stain etch method. Additionally, this study also categorizes the optimal etching parameters which are extensively used to grow Porous Silicon (PS) layers enabling Metal Induced Vapor Phase Stain Etching methodology. Various growth conditions are considered to fabricate uniform porous structures. The structural morphology of PS layers has been studied in scanning electron microscopy (SEM) that reveals macroporous nature of pore morphology supported by investigation of optical properties. This has been supported by characterizing ultraviolet-visible (UV-VIS) spectrophotometer absorption spectra. Surface and optical investigations discover uniform porous structure which augments the size of silicon substrate. This augmented surface of planar silicon substrate can be used as sensing platform for different kinds of sensors.