Analysis of hump effect in tensile-stressed a-IGZO TFT using TCAD simulation

摘要

In this paper, the transfer characteristic of amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistor (TFT) under the mechanical bending stress is analyzed using technology of computer-added design (TCAD). For effective analysis, active layer is divided into two regions of intensive and normal strain with different density of state (DOS) parameter set. Also, the allocation of multi-regions varies by the bending axis based on the stress distribution in channel. Simulation result accounts for the different tendency of degradation according to bending axis and fits well with the measurement. Based on the analysis of the bending axis dependency, we suggest TCAD 3D simulation guideline for hump effect in transfer characteristic under the tensile stress.