A New Device Architecture with Embedded Gate Oxide Gate Work Function for Double Gate MOSFETs

摘要

Metal gate techniques with dissimilar gate work function have been persevered for alleviation of short channel effects (SCEs) and high performance. In this application, embedded oxide-double gate (EO-DG) MOSFETs with dissimilar gates work functions have been proposed. The simulation consequences reveal that the proposed composition device B (gold) with high work function alleviates SCEs like off current (as 3.61×10^{-17 A/μm), subthreshold slope (as 64.74 mV/dec), drain-induced barrier lowering (as 42.14 mV/V), and elevates ON-OFF ratio (ION/IOFF=1.74×1013). Thus, EO-DG MOSFETs are most appropriate candidate for next generation transistors.}