Horizontal integration fabrication of a GaAs-on-InP opto-electronicintegrated circuit (OEIC) using seeded-mask technology: four channelvariable bandwidth optical receiver

机译：GaAs-on-InP光电的水平集成制造使用种子掩膜技术的集成电路（OEIC）：四通道可变带宽光接收机

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The fabrication of a monolithic GaAs-on-InP, four channel,variable-bandwidth photoreceiver using seeded mask technology isdiscussed. The method, which is compatible with atmospheric metalorganicvapor-phase epitaxy (MOVPE) growth, may be applied to lattice matchedelectronics for other optical components. High-frequency data from fullyfunctional OEICs are reported

机译：GaIn-InP单片，四通道，使用种子掩膜技术的可变带宽光接收器是讨论过。该方法与大气有机金属兼容气相外延（MOVPE）生长，可应用于晶格匹配其他光学组件的电子产品。充分利用高频数据报告了功能性OEIC

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《Indium Phosphide and Related Materials, 1991., Third International Conference.》||p.575-578|共4页
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OSullivan P.J.; Allan D.A.; Herniman J.; Coyle N.; Young R.;
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专利

1. 1.2 Gbit/s, 52.5 km optical fibre transmission experiment using OEICs on GaAs-on-InP heterostructure [J] . Suzaki T., Fujita S. Electronics Letters . 1988,第20期

机译：GaAs-on-InP异质结构上使用OEIC进行的1.2 Gbit / s，52.5 km光纤传输实验
2. Fabrication of a heterodyne receiver OEIC with optimized integration process using three MOVPE growth steps only [J] . Hamacher M., Trommer D. IEEE Photonics Technology Letters . 1996,第1期

机译：仅使用三个MOVPE生长步骤制造具有优化集成工艺的外差接收机OEIC
3. New fabrication technology for long-wavelength receiver OEICs [J] . Spear D.A.H., Dawe P.J.G. Electronics Letters . 1989,第2期

机译：长波接收机OEIC的新制造技术
4. Horizontal integration fabrication of a GaAs-on-InP opto-electronic integrated circuit (OEIC) using seeded-mask technology: four channel variable bandwidth optical receiver [C] . OSullivan, P.J., Allan, Indium Phosphide and Related Materials, 1991., Third International Conference. . 1991

机译：使用种子掩模技术的GaAs-on-InP光电集成电路（OEIC）的水平集成制造：四通道可变带宽光接收器
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Synchronous OEIC Integrating Receiver for Optically Reconfigurable Gate Arrays [O] . Carlos Sánchez-Azqueta, Bernhard Goll, Santiago Celma, 2016

机译：用于光可重构门阵列的同步OEIC集成接收器
7. Synchronous OEIC Integrating Receiver for Optically Reconfigurable Gate Arrays [O] . Carlos Sánchez-Azqueta, Bernhard Goll, Santiago Celma, 2016

机译：用于光学可重配置门阵列的同步OEIC集成接收器
8. Optoelectronic Integrated Circuit (OEIC) InGaAs Receiver on a Silicon Substrate. [R] . Olsen, G. H. 1989

机译：硅衬底上的光电集成电路（OEIC）InGaas接收器。

Horizontal integration fabrication of a GaAs-on-InP opto-electronicintegrated circuit (OEIC) using seeded-mask technology: four channelvariable bandwidth optical receiver

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