An assessment of the state-of-the-art 0.5 μm bulk CMOStechnology for RF applications

摘要

We demonstrate that, given the appropriate layout geometry,state-of-the-art, salicided n-MOSFETs with 0.5 μM drawn gates exhibitsimilar g_m (160 mS/mm), f_T (20 GHz), f_MAX (37 GHz), and F_MIN (1.9 dB @ 3.4 GHz) as the morecostly, metal-reinforced SOI or SOS devices of identical gate length.The record f_MAX value for 0.5 μm bulk CMOS is comparableto that of self-aligned, double-polysilicon BJTs