Very-high f_T and f_max silicon bipolartransistors using ultra-high-performance super self-aligned processtechnology for low-energy and ultra-high-speed LSI's

摘要

Very-high f_T (up to 50 GHz) and f_max (up to70 GHz) silicon bipolar transistors have been developed usingUltra-high-performance Super Self-aligned process Technology (USST).This technology is characterized by drastically-scaled lateraldimensions and shallow, heavily-doped extrinsic base structures. USSTgreatly reduces base-collector junction capacitance and base resistance,and hence makes f_max about twice as large as SST1C technologywithout vertical scaling. The fabricated ECL circuits show a minimumgate delay of 16.5 ps at a switching current of I_CS=1.0 mA/G