Unified model of boron diffusion in thin gate oxides: effects of F,H₂, N, oxide thickness and injected Si interstitials

摘要

This work is describes the first unified network-defect-levelmodel for B diffusion in SiO₂ for use in process simulation.Models have been developed to explain silicon processing effects on Bdiffusion through thin gate oxides. With these models we can predict theenhanced B diffusion effects in poly Si/SiO₂ structures fromBF₂ implants, wet oxidation and exposure to H₂ambients, and the concentration of N in nitrided oxides in reducing Bdiffusion. We have also shown for the first time that there is an oxidethickness dependence on B diffusion