New fabrication method and emission characteristics of siliconfield emitters

摘要

A new fabrication method of silicon field emitters has beenproposed, which combines the Si KOH anisotropic etching andlocal-oxidation of silicon (LOCOS) techniques to form the emitter tip.Wedge-shaped and conical-shaped silicon emitters fabricated using thistechnique had an extremely well-defined structure indicative of goodreproducibility and uniformity of the fabrication process. The emissioncharacteristics have been examined under UHV conditions and it has beenrevealed that both the anode and gate currents are governed by theFowler-Nordheim mechanism and show an excellent emission characteristic