Fabrication of 4H-SiC Schottky barrier diodes with the epilayer grown by Bis-trimethylsilylmethane precursor

摘要

The authors fabricated the 4H-SiC Schottky barrier diodes (SBDs) with the epilayers grown using the MOCVD. Bis-trimethylsilylmethane (BTMSM, [C7H20Si2]) was used as a single precursor for Si and C sources.