Optical properties of strain-compensated hybrid InGaN/InGaN/ZnO quantum well light-emitting diodes

摘要

Optical properties of 530 nm strain-compensated InGaN/InGaN/ZnO quantum well (QW) light-emitting diodes (LEDs) using a ZnO substrate are investigated using the multiband effective mass theory. These results are compared with those of conventional InGaN/GaN QW LEDs using a GaN substrate. A strain-compensated QW structure is found to have much larger spontaneous emission than a InGaN/GaN QW structure. This can be explained by the reduction in the internal field due to the piezoelectric and spontaneous polarizations.