Ultralow threshold current 780-nm vertical-cavity surface-emitting lasers with oxide current aperture

摘要

Summary form only given. Vertical cavity surface-emitting lasers (VCSELs) operating at 780 nm usually have AlAs-GaAs superlattice active region, but no good performance is reported yet. We demonstrate the new type of 780 nm VCSELs having AlGaAs DBR quantum wells (QWs) as the active medium. Oxide aperture is located just above the active region for efficient current confinement.