Electromigration simulation under DC/AC stresses consideringmicrostructure

摘要

In this work, we present a dynamic finite difference simulation onthe stress evolution along an IC interconnect under both DC and ACcurrent densities, while taking into account the inhomogeneity of grainsize and grain boundary orientation. Furthermore, we related both theaccelerating stress and microstructural conditions to the lifetime byassuming certain built-up stress levels as failure criteria