首页> 外文会议>Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual >A simple design technique for the Gilbert cell in MMIC technology:Application to a DSB modulator
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A simple design technique for the Gilbert cell in MMIC technology:Application to a DSB modulator

机译:MMIC技术中吉尔伯特单元的一种简单设计技术:应用于DSB调制器

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A theoretical analysis of the Gilbert cell has been performed inorder to accomplish a simple design method which allows one to choosethe width and the bias point (% of IDSS) of the MESFETtransistors of the Gilbert cell. A wide band (1 to 5 GHz) double sideband modulator has been designed and built using this method. It iscomprised of an input differential amplifier, a Gilbert cell and anoutput differential amplifier and it has been implemented with the F200.5 μm Process of GEC Marconi. A carrier rejection of 50 dB and athird order intermodulation rejection of 47 dB have been measured at 2GHz. The DC power consumption of the Gilbert cell is 136 mW
机译:对吉尔伯特单元的理论分析已经在 为了完成一种简单的设计方法,使人们可以选择 MESFET的宽度和偏置点(I DSS 的百分比) 吉尔伯特单元的晶体管。宽带(1至5 GHz)双面 频段调制器已使用此方法进行了设计和构建。它是 由一个输入差分放大器,一个吉尔伯特单元和一个 输出差分放大器,并且已与F20一起实现 GEC Marconi的0.5μm工艺50 dB的载波抑制和 在2处测得47 dB的三阶互调抑制 GHz。 Gilbert电池的直流功耗为136 mW

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