Advances in CPW-design applied to monolithic integrated Ka-bandMESFET and HEMT-amplifiers on GaAs

摘要

Two Ka-band amplifiers in coplanar waveguide (CPW)technology are presented. The four-stage design is based on 0.3-μmMESFETs, whereas in the three-stage amplifier 0.25-μmhigh-electron-mobility transistors (HEMTs) are used. The monolithicmicrowave integrated circuits (MMICs) are designed for a gain of 20 dB.The authors present the realized MMICs and in particular the way inwhich typical difficulties arising from transforming theoretical demandsinto a coplanar circuit layout can be overcome. The applicability andaccuracy of the developed design procedures are demonstrated bycomparison of simulated and measured results