High efficiency X-band power HBTs

摘要

High-efficiency X-band power GaAs-AlGaAs HBT(heterojunction bipolar transistor) performance has been achieved. Acommon-base 6-emitter-finger HBT device (each finger periphery 2μm×20 μm) exhibited a power-added-efficiency of 62.1%, anoutput power of 769 mW (power density of 6.4 W/mm), and a gain of 7.9 dBat 9 GHz. As compared to the published state-of-the-art results, thisdevice showed better power efficiency and density at the same outputpower level. This high performance is attributed to process enhancementand a novel device topology