首页> 外文会议>Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual >A Rh/Au/Rh rigid air-bridge interconnection technique forultra-high speed GaAs LSIs
【24h】

A Rh/Au/Rh rigid air-bridge interconnection technique forultra-high speed GaAs LSIs

机译:Rh / Au / Rh刚性气桥互连技术用于超高速GaAs LSI

获取原文

摘要

A rhodium/gold/rhodium (Rh/Au/Rh) air-bridge interconnection hasbeen developed for applying to ultra-high-speed GaAs LSIs. Thisstructure is suitable for forming a mechanically strong air-bridgeinterconnection, which enables an interconnection length to be expandedwithout many support-pillars, compared with a gold air-bridgeinterconnection. This contribution of the air-bridge interconnection tototal propagation delay time in a GaAs LSI chip is quantitivelyinvestigated. It is found that applying the air-bridge interconnectionto a GaAs LSI with 10 K-gate complexity causes total delay time to bereduced to 65%, compared with the conventional interconnection
机译:铑/金/铑(Rh / Au / Rh)空桥互连具有 是为应用于超高速GaAs LSI而开发的。这 结构适合于形成机械强度高的气桥 互连,从而可以扩展互连长度 没有很多支撑柱,与金空桥相比 互连。空桥互连对 GaAs LSI芯片中的总传播延迟时间是定量的 调查。发现应用气桥互连 栅极复杂度为10 K的GaAs LSI导致总延迟时间为 与传统的互连相比,降低了65%

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号