首页> 外文会议>Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual >High speed 8:1 multiplexer and 1:8 demultiplexer implanted withAlGaAs/GaAs HBTs
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High speed 8:1 multiplexer and 1:8 demultiplexer implanted withAlGaAs/GaAs HBTs

机译:植入了高速8:1多路复用器和1:8多路解复用器AlGaAs / GaAs HBT

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Development of an 8:1 multiplexer and 1:8 demultiplexerimplemented with AlGaAs/GaAs heterojunction bipolar transistors isreported. The circuits were designed for lightwave communications andoperate at data rates above 6 Gbit/s. The intrinsic speed of thecircuits can be further increased by design changes with more powerallocated per gate and better time matching at the high-speed ends. Thecircuit design, fabrication, and test results are presented
机译:开发8:1多路复用器和1:8多路分离器 用AlGaAs / GaAs异质结双极晶体管实现的是 报告。这些电路是专为光波通信而设计的, 以高于6 Gbit / s的数据速率运行。内在速度 可以通过更改功率更大的设计来进一步增加电路 每个门分配和高速端更好的时间匹配。这 介绍了电路设计,制造和测试结果

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